FDC642P
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| Manufacturer | onsemi |
| Package | SOT-23-6 Thin, TSOT-23-6 |
| Datasheet | FDC642P |
| Description | P-Channel 20V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6 |
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مشخصات FDC642P
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDC642P
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1.6W
- Total Gate Charge (Qg@Vgs) 16nC@4.5V
- Input Capacitance (Ciss@Vds) 925pF@10V
- Continuous Drain Current (Id) 4A
- Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 65mΩ@4A,4.5V
- Package SSOT-6
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs 65mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 925pF @ 10V
- FET Feature -
- Power Dissipation (Max) 1.6W (Ta)
- Mounting Type Surface Mount
- Supplier Device Package SuperSOT™-6
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Base Part Number FDC642
- detail P-Channel 20V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
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