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- دیتاشیت NSS40300DDR2G
NSS40300DDR2G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | NSS40300DDR2G |
|---|---|
| حجم فایل | 83.14 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت NSS40300DDR2G |
دانلود دیتاشیت |
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سایر مستندات
NSS40300DDR2G 6 pages
NSS40300DDR2G 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NSS40300DDR2G
- Transistor Type: 2PCSPNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 653mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 180@1A,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 135mV@2A,200mA
- Package: SOP-8
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 653mW
- Frequency - Transition: 100MHz
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- Base Part Number: NSS403
- detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC