NSS40300DDR2G
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| Manufacturer | onsemi |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | NSS40300DDR2G |
| Description | Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NSS40300DDR2G
- Transistor Type 2PCSPNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 653mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 180@1A,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 135mV@2A,200mA
- Package SOP-8
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 3A
- Voltage - Collector Emitter Breakdown (Max) 40V
- Vce Saturation (Max) @ Ib, Ic 170mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V
- Power - Max 653mW
- Frequency - Transition 100MHz
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package 8-SOIC
- Base Part Number NSS403
- detail Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
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