دیتاشیت NJW21193G
مشخصات دیتاشیت
| نام دیتاشیت |
NJW2119(3, 4)G
|
| حجم فایل |
120.354
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi NJW21193G
-
Transistor Type:
PNP
-
Operating Temperature:
-65°C~+150°C@(Tj)
-
Collector Current (Ic):
16A
-
Power Dissipation (Pd):
200W
-
Transition Frequency (fT):
4MHz
-
DC Current Gain (hFE@Ic,Vce):
20@8A,5V
-
Collector Cut-Off Current (Icbo):
100uA
-
Collector-Emitter Breakdown Voltage (Vceo):
250V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
4V@3.2A,16A
-
Package:
TO-3P
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
16A
-
Voltage - Collector Emitter Breakdown (Max):
250V
-
Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
-
Current - Collector Cutoff (Max):
100µA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 8A, 5V
-
Power - Max:
200W
-
Frequency - Transition:
4MHz
-
Mounting Type:
Through Hole
-
Package / Case:
TO-3P-3, SC-65-3
-
Supplier Device Package:
TO-3P-3L
-
Base Part Number:
NJW21
-
detail:
Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-3P-3L
