NJW21193G
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| Manufacturer | onsemi |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | NJW2119(3, 4)G |
| Description | Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-3P-3L |
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مشخصات NJW21193G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NJW21193G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 16A
- Power Dissipation (Pd) 200W
- Transition Frequency (fT) 4MHz
- DC Current Gain (hFE@Ic,Vce) 20@8A,5V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 250V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 4V@3.2A,16A
- Package TO-3P
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 16A
- Voltage - Collector Emitter Breakdown (Max) 250V
- Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A, 5V
- Power - Max 200W
- Frequency - Transition 4MHz
- Mounting Type Through Hole
- Package / Case TO-3P-3, SC-65-3
- Supplier Device Package TO-3P-3L
- Base Part Number NJW21
- detail Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-3P-3L
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