دیتاشیت FQA11N90-F109
مشخصات دیتاشیت
| نام دیتاشیت |
FQA11N90-F109
|
| حجم فایل |
1542.537
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
QFET®
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
900V
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Current - Continuous Drain (Id) @ 25°C:
11.4A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
960mOhm @ 5.7A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
94nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
3500pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
300W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
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Supplier Device Package:
TO-3PN
-
Package / Case:
TO-3P-3, SC-65-3
-
Base Part Number:
FQA1
-
detail:
N-Channel 900V 11.4A (Tc) 300W (Tc) Through Hole TO-3PN
