دیتاشیت FDP054N10
مشخصات دیتاشیت
| نام دیتاشیت |
FDP054N10
|
| حجم فایل |
940.023
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDP054N10
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
TO-220
-
Manufacturer:
onsemi
-
Series:
PowerTrench®
-
Packaging:
Tube
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Part Status:
Active
-
FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 75A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
203nC @ 10V
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Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
13280pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
263W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
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Supplier Device Package:
TO-220-3
-
Package / Case:
TO-220-3
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Base Part Number:
FDP054
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detail:
N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220-3
