FDP054N10
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FDP054N10 |
| Description | N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220-3 |
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تغییرات قیمت
مشخصات FDP054N10
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDP054N10
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) -
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) -
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) -
- Package TO-220
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 5.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 13280pF @ 25V
- FET Feature -
- Power Dissipation (Max) 263W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FDP054
- detail N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220-3
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