NSVIMD10AMT1G دیتاشیت

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مشاهده دیتاشیت NSVIMD10AMT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: onsemi NSVIMD10AMT1G
Transistor Type: 1 NPN,1 PNP - Pre-Biased
Collector Current (Ic): 500mA
Power Dissipation (Pd): 285mW
Transition Frequency (fT): -
DC Current Gain (hFE@Ic,Vce): 100@1mA,5V;68@100mA,5V
Collector Cut-Off Current (Icbo): 500nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,1mA
Package: SC-74R-6
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 285mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SC-74R
Base Part Number: NSVIMD10
detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R