NSVIMD10AMT1G

NSVIMD10AMT1G

NSVIMD10AMT1G

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مشخصات فنی:
Manufacturer onsemi
Package SOT-23-6 Thin, TSOT-23-6
Datasheet IMD10AMT1G
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet onsemi NSVIMD10AMT1G
  • Transistor Type 1 NPN,1 PNP - Pre-Biased
  • Collector Current (Ic) 500mA
  • Power Dissipation (Pd) 285mW
  • Transition Frequency (fT) -
  • DC Current Gain (hFE@Ic,Vce) 100@1mA,5V;68@100mA,5V
  • Collector Cut-Off Current (Icbo) 500nA
  • Collector-Emitter Breakdown Voltage (Vceo) 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@10mA,1mA
  • Package SC-74R-6
  • Manufacturer onsemi
  • Series Automotive, AEC-Q101
  • Packaging Cut Tape (CT)
  • Part Status Active
  • Current - Collector (Ic) (Max) 500mA
  • Voltage - Collector Emitter Breakdown (Max) 50V
  • Resistor - Base (R1) 13kOhms, 130Ohms
  • Resistor - Emitter Base (R2) 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V / 68 @ 100mA, 5V
  • Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) 500nA
  • Frequency - Transition -
  • Power - Max 285mW
  • Mounting Type Surface Mount
  • Package / Case SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package SC-74R
  • Base Part Number NSVIMD10
  • detail Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

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