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- دیتاشیت MJE18008G
MJE18008G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | MJE18008G |
|---|---|
| حجم فایل | 100.571 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت MJE18008G |
دانلود دیتاشیت |
|---|
سایر مستندات
MJE18008, MJF18008 10 pages
MJE18008G 10 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MJE18008G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 125W
- Transition Frequency (fT): 13MHz
- DC Current Gain (hFE@Ic,Vce): 14@1A,5V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 450V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@2A,200mA
- Package: TO-220F
- Manufacturer: onsemi
- Series: SWITCHMODE™
- Packaging: Tube
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 900mA, 4.5V
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
- Power - Max: 125W
- Frequency - Transition: 13MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: MJE18
- detail: Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB