MJE18008G
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | MJE18008, MJF18008 |
| Description | Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJE18008G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 125W
- Transition Frequency (fT) 13MHz
- DC Current Gain (hFE@Ic,Vce) 14@1A,5V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 450V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@2A,200mA
- Package TO-220F
- Manufacturer onsemi
- Series SWITCHMODE™
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 450V
- Vce Saturation (Max) @ Ib, Ic 700mV @ 900mA, 4.5V
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 1A, 5V
- Power - Max 125W
- Frequency - Transition 13MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number MJE18
- detail Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB
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