FDA16N50LDTU دیتاشیت

FDA16N50LDTU

مشخصات دیتاشیت

نام دیتاشیت FDA16N50LDTU
حجم فایل 74.953 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت FDA16N50LDTU

دانلود دیتاشیت

سایر مستندات

FDA16N50LDTU 9 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDA16N50LDTU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 205W
  • Total Gate Charge (Qg@Vgs): 45nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 1945pF@25V
  • Continuous Drain Current (Id): 16.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@8.3A,10V
  • Package: TO-3P
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN (L-Forming)
  • Package / Case: TO-3P-3, SC-65-3 (Formed Leads)
  • Base Part Number: FDA16
  • detail: N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN (L-Forming)

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