FDA16N50LDTU

FDA16N50LDTU

FDA16N50LDTU

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مشخصات فنی:
Manufacturer onsemi
Package TO-3P-3, SC-65-3 (Formed Leads)
Datasheet FDA16N50LDTU
Description N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN (L-Forming)

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi FDA16N50LDTU
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 205W
  • Total Gate Charge (Qg@Vgs) 45nC@10V
  • Drain Source Voltage (Vdss) 500V
  • Input Capacitance (Ciss@Vds) 1945pF@25V
  • Continuous Drain Current (Id) 16.5A
  • Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 380mΩ@8.3A,10V
  • Package TO-3P
  • Manufacturer onsemi
  • Series -
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 500V
  • Current - Continuous Drain (Id) @ 25°C 16.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 380mOhm @ 8.3A, 10V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 1945pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 205W (Tc)
  • Mounting Type Through Hole
  • Supplier Device Package TO-3PN (L-Forming)
  • Package / Case TO-3P-3, SC-65-3 (Formed Leads)
  • Base Part Number FDA16
  • detail N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN (L-Forming)

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