NVH4L080N120SC1 دیتاشیت

NVH4L080N120SC1

مشخصات دیتاشیت

نام دیتاشیت NVH4L080N120SC1
حجم فایل 70.722 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت NVH4L080N120SC1

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سایر مستندات

NVH4L080N120SC1 7 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVH4L080N120SC1
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 170W
  • Total Gate Charge (Qg@Vgs): 56nC@-5V/20V
  • Drain Source Voltage (Vdss): 1.2kV
  • Input Capacitance (Ciss@Vds): 1.112nF@800V
  • Continuous Drain Current (Id): 29A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.75V@5mA
  • Reverse Transfer Capacitance (Crss@Vds): 6.5pF@800V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@20V,20A
  • Package: TO-247-4
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
  • Vgs (Max): +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 800V
  • FET Feature: -
  • Power Dissipation (Max): 170mW (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
  • detail: N-Channel 1200V 29A (Tc) 170mW (Tc) Through Hole TO-247-4

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