NTH4L020N120SC1 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTH4L020N120SC1
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حجم فایل
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284.353
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
SiC (Silicon Carbide Junction Transistor)
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Drain to Source Voltage (Vdss):
1200V
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Current - Continuous Drain (Id) @ 25°C:
102A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
20V
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Rds On (Max) @ Id, Vgs:
28mOhm @ 60A, 20V
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Vgs(th) (Max) @ Id:
4.3V @ 20mA
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Gate Charge (Qg) (Max) @ Vgs:
220nC @ 20V
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Vgs (Max):
+25V, -15V
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Input Capacitance (Ciss) (Max) @ Vds:
2943pF @ 800V
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FET Feature:
-
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Power Dissipation (Max):
510W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247-4
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Package / Case:
TO-247-4
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detail:
N-Channel 1200V 102A (Tc) 510W (Tc) Through Hole TO-247-4
