دیتاشیت FDMS86300
مشخصات دیتاشیت
| نام دیتاشیت |
FDMS86300
|
| حجم فایل |
70.016
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات فنی
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NVD5C684NLT4G
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
27W
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Total Gate Charge (Qg@Vgs):
4.6nC@4.5V
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Input Capacitance (Ciss@Vds):
700pF@25V
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Continuous Drain Current (Id):
38A
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Gate Threshold Voltage (Vgs(th)@Id):
2.1V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
16.5mΩ@15A,10V
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
Automotive, AEC-Q101
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
16.5mOhm @ 15A, 10V
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Vgs(th) (Max) @ Id:
2.1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
4.6nC @ 4.5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
27W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
NVD5C6
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detail:
N-Channel 60V 38A (Tc) 27W (Tc) Surface Mount DPAK
