ATP101-TL-H 数据手册
其他文档
ATP101 7 pages
技术规格
- RoHS: true
- Type: -
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi ATP101-TL-H
- Power Dissipation (Pd): -
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): -
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): -
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): -
- Package: -
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: ATPAK (2 leads+tab)
- Base Part Number: ATP101
- detail: P-Channel 30V 25A (Ta) 30W (Tc) Surface Mount ATPAK