ATP101-TL-H
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| Manufacturer | onsemi |
| Package | ATPAK (2 leads+tab) |
| Datasheet | ATP101 |
| Description | P-Channel 30V 25A (Ta) 30W (Tc) Surface Mount ATPAK |
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مشخصات ATP101-TL-H
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi ATP101-TL-H
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) -
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) -
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) -
- Package -
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 30mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id -
- Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 875pF @ 10V
- FET Feature -
- Power Dissipation (Max) 30W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package ATPAK
- Package / Case ATPAK (2 leads+tab)
- Base Part Number ATP101
- detail P-Channel 30V 25A (Ta) 30W (Tc) Surface Mount ATPAK
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