NTMS7N03R2G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTMS7N03R2G
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حجم فایل
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52.38
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTMS7N03R2G
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Power Dissipation (Pd):
800mW
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Drain Source Voltage (Vdss):
30V
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Continuous Drain Current (Id):
4.8A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
23mΩ@10V,7A
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Package:
SOP-8
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
4.8A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
23mOhm @ 7A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1190pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
800mW (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
8-SOIC
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Base Part Number:
NTMS7N
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detail:
N-Channel 30V 4.8A (Ta) 800mW (Ta) Surface Mount 8-SOIC
