NTMS7N03R2G
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| Manufacturer | onsemi |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | NTMS7N03R2 |
| Description | N-Channel 30V 4.8A (Ta) 800mW (Ta) Surface Mount 8-SOIC |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTMS7N03R2G
- Power Dissipation (Pd) 800mW
- Drain Source Voltage (Vdss) 30V
- Continuous Drain Current (Id) 4.8A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 23mΩ@10V,7A
- Package SOP-8
- Manufacturer onsemi
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
- FET Feature -
- Power Dissipation (Max) 800mW (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-SOIC
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Base Part Number NTMS7N
- detail N-Channel 30V 4.8A (Ta) 800mW (Ta) Surface Mount 8-SOIC
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