دیتاشیت NSV1C301ET4G-VF01

NSV1C301ET4G

مشخصات دیتاشیت

نام دیتاشیت NSV1C301ET4G
حجم فایل 73.062 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت NSV1C301ET4G

NSV1C301ET4G Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NSV1C301ET4G-VF01
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 2.1W
  • Transition Frequency (fT): 120MHz
  • DC Current Gain (hFE@Ic,Vce): 120@1A,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 100V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 115mV@3A,300mA
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 2.1W
  • Frequency - Transition: 120MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: NSV1C3
  • detail: Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK