دیتاشیت NSV1C301ET4G-VF01
مشخصات دیتاشیت
| نام دیتاشیت | NSV1C301ET4G |
|---|---|
| حجم فایل | 73.062 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت NSV1C301ET4G |
NSV1C301ET4G Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NSV1C301ET4G-VF01
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 2.1W
- Transition Frequency (fT): 120MHz
- DC Current Gain (hFE@Ic,Vce): 120@1A,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 115mV@3A,300mA
- Package: TO-252
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Packaging: Tape & Reel (TR)
- Part Status: Active
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 2.1W
- Frequency - Transition: 120MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Base Part Number: NSV1C3
- detail: Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK