NVTFS014P04M8LTAG دیتاشیت

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RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVTFS014P04M8LTAG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 61W
Total Gate Charge (Qg@Vgs): 12.5nC@4.5V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 1.734nF@20V
Continuous Drain Current (Id): 49A
Gate Threshold Voltage (Vgs(th)@Id): 2.4V@420uA
Reverse Transfer Capacitance (Crss@Vds): 32pF@20V
Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,15A
Package: WDFN-8(3x3)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1734pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NVTFS0
detail: P-Channel 40V 11.3A (Ta), 49A (Tc) 3.2W (Ta), 61W (Tc) Surface Mount 8-WDFN (3.3x3.3)