FQB1P50TM دیتاشیت

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مشاهده دیتاشیت FQB1P50TM	دانلود دیتاشیت

FQB1P50 9 pages

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FQB1P50TM
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.13W;63W
Total Gate Charge (Qg@Vgs): 11nC@10V
Drain Source Voltage (Vdss): 500V
Input Capacitance (Ciss@Vds): 270pF@25V
Continuous Drain Current (Id): 1.5A
Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
Reverse Transfer Capacitance (Crss@Vds): 6pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 8Ω@10V,750mA
Package: D2PAK
Manufacturer: onsemi
Series: QFET®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: FQB1
detail: P-Channel 500V 1.5A (Tc) 3.13W (Ta), 63W (Tc) Surface Mount D²PAK (TO-263AB)