FCMT360N65S3 دیتاشیت

FCMT360N65S3

مشخصات دیتاشیت

نام دیتاشیت FCMT360N65S3
حجم فایل 75.609 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FCMT360N65S3

دانلود دیتاشیت

سایر مستندات

FCMT360N65S3 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCMT360N65S3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 83W
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 730pF@400V
  • Continuous Drain Current (Id): 10A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@200uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@5A,10V
  • Package: PQFN-4(8x8)
  • Manufacturer: onsemi
  • Series: SuperFET® III
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-PQFN (8x8)
  • Package / Case: 4-PowerTSFN
  • Base Part Number: FCMT360
  • detail: N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount 4-PQFN (8x8)

محصولات مشابه