FCMT360N65S3

650V 10A 83W 360mΩ@5A,10V null PQFN-4(8x8) MOSFETs ROHS

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مشخصات فنی:
Manufacturer onsemi
Package 4-PowerTSFN
Datasheet FCMT360N65S3
Description N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount 4-PQFN (8x8)

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi FCMT360N65S3
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 83W
  • Total Gate Charge (Qg@Vgs) 18nC@10V
  • Drain Source Voltage (Vdss) 650V
  • Input Capacitance (Ciss@Vds) 730pF@400V
  • Continuous Drain Current (Id) 10A
  • Gate Threshold Voltage (Vgs(th)@Id) 4.5V@200uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 360mΩ@5A,10V
  • Package PQFN-4(8x8)
  • Manufacturer onsemi
  • Series SuperFET® III
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 650V
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 730pF @ 400V
  • FET Feature -
  • Power Dissipation (Max) 83W (Tc)
  • Mounting Type Surface Mount
  • Supplier Device Package 4-PQFN (8x8)
  • Package / Case 4-PowerTSFN
  • Base Part Number FCMT360
  • detail N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount 4-PQFN (8x8)

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