دیتاشیت 2SJ652-1E

2SJ652

مشخصات دیتاشیت

نام دیتاشیت 2SJ652
حجم فایل 255.415 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت 2SJ652

2SJ652 Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Bulk
  • Part Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220ML
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: 2SJ652
  • detail: P-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220ML