دیتاشیت 2SJ652-1E
مشخصات دیتاشیت
نام دیتاشیت |
2SJ652
|
حجم فایل |
255.415
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Bulk
-
Part Status:
Obsolete
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
28A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
38mOhm @ 14A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
-
Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
4360pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
2W (Ta), 30W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220ML
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
2SJ652
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detail:
P-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220ML