2SJ652-1E
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 Full Pack |
| Datasheet | 2SJ652 |
| Description | P-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220ML |
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مشخصات 2SJ652-1E
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Obsolete
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Rds On (Max) @ Id, Vgs 38mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id -
- Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 20V
- FET Feature -
- Power Dissipation (Max) 2W (Ta), 30W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220ML
- Package / Case TO-220-3 Full Pack
- Base Part Number 2SJ652
- detail P-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220ML
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