MJ14002G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJ14002G
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حجم فایل
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98.211
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJ14002G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+200°C@(Tj)
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Collector Current (Ic):
60A
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Power Dissipation (Pd):
300W
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DC Current Gain (hFE@Ic,Vce):
15@50A,3V
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Collector Cut-Off Current (Icbo):
1mA
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Collector-Emitter Breakdown Voltage (Vceo):
80V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
3V@12A,60A
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Package:
TO-204
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tray
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Part Status:
Active
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Current - Collector (Ic) (Max):
60A
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Voltage - Collector Emitter Breakdown (Max):
80V
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Vce Saturation (Max) @ Ib, Ic:
3V @ 12A, 60A
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Current - Collector Cutoff (Max):
1mA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 50A, 3V
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Power - Max:
300W
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Frequency - Transition:
-
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Mounting Type:
Through Hole
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Package / Case:
TO-204AE
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Supplier Device Package:
TO-3
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Base Part Number:
MJ140
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detail:
Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3
