MJ14002G
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| Manufacturer | onsemi |
| Package | TO-204AE |
| Datasheet | MJ14001,2,3 |
| Description | Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJ14002G
- Transistor Type NPN
- Operating Temperature -65°C~+200°C@(Tj)
- Collector Current (Ic) 60A
- Power Dissipation (Pd) 300W
- DC Current Gain (hFE@Ic,Vce) 15@50A,3V
- Collector Cut-Off Current (Icbo) 1mA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 3V@12A,60A
- Package TO-204
- Manufacturer onsemi
- Series -
- Packaging Tray
- Part Status Active
- Current - Collector (Ic) (Max) 60A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 3V @ 12A, 60A
- Current - Collector Cutoff (Max) 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 50A, 3V
- Power - Max 300W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-204AE
- Supplier Device Package TO-3
- Base Part Number MJ140
- detail Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3
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