دیتاشیت MJD44H11-1G

MJD44H11, MJD45H11

مشخصات دیتاشیت

نام دیتاشیت MJD44H11, MJD45H11
حجم فایل 93.654 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

دانلود دیتاشیت MJD44H11, MJD45H11

MJD44H11, MJD45H11 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi MJD44H11-1G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 8A
  • Power Dissipation (Pd): 1.75W
  • Transition Frequency (fT): 85MHz
  • DC Current Gain (hFE@Ic,Vce): 40@4A,1V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
  • Package: TO-251(IPAK)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 1.75W
  • Frequency - Transition: 85MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-PAK
  • Base Part Number: MJD44
  • detail: Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Through Hole I-PAK

دیتاشیت محصولات مشابه