MJD44H11-1G
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| Manufacturer | onsemi |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | MJD44H11, MJD45H11 |
| Description | Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Through Hole I-PAK |
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مشخصات MJD44H11-1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJD44H11-1G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 1.75W
- Transition Frequency (fT) 85MHz
- DC Current Gain (hFE@Ic,Vce) 40@4A,1V
- Collector Cut-Off Current (Icbo) 1uA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@8A,400mA
- Package TO-251(IPAK)
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
- Current - Collector Cutoff (Max) 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
- Power - Max 1.75W
- Frequency - Transition 85MHz
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package I-PAK
- Base Part Number MJD44
- detail Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Through Hole I-PAK
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