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- دیتاشیت 2N6491G
2N6491G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | 2N6491G |
|---|---|
| حجم فایل | 85.121 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت 2N6491G |
دانلود دیتاشیت |
|---|
سایر مستندات
2N6487,88, 90,91 6 pages
2N6491G 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi 2N6491G
- Transistor Type: PNP
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 15A
- Power Dissipation (Pd): 1.8W
- Transition Frequency (fT): 5MHz
- DC Current Gain (hFE@Ic,Vce): 20@5A,4V
- Collector Cut-Off Current (Icbo): 1mA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 3.5V@5A,15A
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
- Power - Max: 1.8W
- Frequency - Transition: 5MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: 2N6491
- detail: Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220AB