2N6491G
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | 2N6487,88, 90,91 |
| Description | Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220AB |
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مشخصات 2N6491G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2N6491G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 15A
- Power Dissipation (Pd) 1.8W
- Transition Frequency (fT) 5MHz
- DC Current Gain (hFE@Ic,Vce) 20@5A,4V
- Collector Cut-Off Current (Icbo) 1mA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 3.5V@5A,15A
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 15A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
- Current - Collector Cutoff (Max) 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V
- Power - Max 1.8W
- Frequency - Transition 5MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number 2N6491
- detail Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220AB
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