2N6487,88, 90,91 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
2N6487,88, 90,91
|
|
حجم فایل
|
101.097
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi 2N6488G
-
Transistor Type:
NPN
-
Operating Temperature:
-65°C~+150°C@(Tj)
-
Collector Current (Ic):
15A
-
Power Dissipation (Pd):
1.8W
-
Transition Frequency (fT):
5MHz
-
DC Current Gain (hFE@Ic,Vce):
20@5A,4V
-
Collector Cut-Off Current (Icbo):
1mA
-
Collector-Emitter Breakdown Voltage (Vceo):
80V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
3.5V@15A,5A
-
Package:
TO-220
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
Current - Collector (Ic) (Max):
15A
-
Voltage - Collector Emitter Breakdown (Max):
80V
-
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 5A, 15A
-
Current - Collector Cutoff (Max):
1mA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 5A, 4V
-
Power - Max:
1.8W
-
Frequency - Transition:
5MHz
-
Mounting Type:
Through Hole
-
Package / Case:
TO-220-3
-
Supplier Device Package:
TO-220AB
-
Base Part Number:
2N6488
-
detail:
Bipolar (BJT) Transistor NPN 80V 15A 5MHz 1.8W Through Hole TO-220AB
