MJE5731AG دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
MJE5731AG
|
|
حجم فایل
|
84.358
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
7
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi MJE5731AG
-
Transistor Type:
PNP
-
Operating Temperature:
-65°C~+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
40W
-
Transition Frequency (fT):
10MHz
-
DC Current Gain (hFE@Ic,Vce):
30@300mA,10V
-
Collector Cut-Off Current (Icbo):
1mA
-
Collector-Emitter Breakdown Voltage (Vceo):
375V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@1A,200mA
-
Package:
TO-220
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
375V
-
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
-
Current - Collector Cutoff (Max):
1mA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
-
Power - Max:
40W
-
Frequency - Transition:
10MHz
-
Mounting Type:
Through Hole
-
Package / Case:
TO-220-3
-
Supplier Device Package:
TO-220AB
-
Base Part Number:
MJE57
-
detail:
Bipolar (BJT) Transistor PNP 375V 1A 10MHz 40W Through Hole TO-220AB
