MJE5731AG
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | MJE5730, 31(A) |
| Description | Bipolar (BJT) Transistor PNP 375V 1A 10MHz 40W Through Hole TO-220AB |
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مشخصات MJE5731AG
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJE5731AG
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 40W
- Transition Frequency (fT) 10MHz
- DC Current Gain (hFE@Ic,Vce) 30@300mA,10V
- Collector Cut-Off Current (Icbo) 1mA
- Collector-Emitter Breakdown Voltage (Vceo) 375V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@1A,200mA
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 375V
- Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
- Current - Collector Cutoff (Max) 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V
- Power - Max 40W
- Frequency - Transition 10MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number MJE57
- detail Bipolar (BJT) Transistor PNP 375V 1A 10MHz 40W Through Hole TO-220AB
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