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BD679G Datasheet
Datasheet specifications
| Datasheet's name | BD675(A),77(A),79(A),81 |
|---|---|
| File size | 83.495 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet BD675(A),77(A),79(A),81 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi BD679G
- Package: TO-225
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
- Base Part Number: BD679
- detail: Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA
