BD681G
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD675(A),77(A),79(A),81 |
| Description | Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-225AA |
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مشخصات BD681G
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi BD681G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 40W
- Transition frequency (fT) -
- DC current gain (hFE@Vce,Ic) 750@3V,1.5A
- Collector-emitter voltage (Vceo) 100V
- Collector cut-off current (Icbo@Vcb) 500uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 2.5V@1.5A,30mA
- Package TO-225
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max) 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
- Power - Max 40W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-225AA
- Base Part Number BD681
- detail Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-225AA
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