BUV22G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
BUV22G
|
|
حجم فایل
|
80.513
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi BUV22G
-
Transistor Type:
NPN
-
Operating Temperature:
-65°C~+200°C@(Tj)
-
Collector Current (Ic):
40A
-
Power Dissipation (Pd):
250W
-
Transition Frequency (fT):
8MHz
-
DC Current Gain (hFE@Ic,Vce):
20@10A,4V
-
Collector Cut-Off Current (Icbo):
3mA
-
Collector-Emitter Breakdown Voltage (Vceo):
250V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.5V@2.5A,20A
-
Package:
TO-204
-
Manufacturer:
onsemi
-
Series:
SWITCHMODE™
-
Packaging:
Tray
-
Part Status:
Obsolete
-
Current - Collector (Ic) (Max):
40A
-
Voltage - Collector Emitter Breakdown (Max):
250V
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 2.5A, 20A
-
Current - Collector Cutoff (Max):
3mA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10A, 4V
-
Power - Max:
250W
-
Frequency - Transition:
8MHz
-
Mounting Type:
Through Hole
-
Package / Case:
TO-204AE
-
Supplier Device Package:
TO-3
-
Base Part Number:
BUV22
-
detail:
Bipolar (BJT) Transistor NPN 250V 40A 8MHz 250W Through Hole TO-3
