BUV22G
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| Manufacturer | onsemi |
| Package | TO-204AE |
| Datasheet | BUV22 |
| Description | Bipolar (BJT) Transistor NPN 250V 40A 8MHz 250W Through Hole TO-3 |
sellers BUV22G
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BUV22G
- Transistor Type NPN
- Operating Temperature -65°C~+200°C@(Tj)
- Collector Current (Ic) 40A
- Power Dissipation (Pd) 250W
- Transition Frequency (fT) 8MHz
- DC Current Gain (hFE@Ic,Vce) 20@10A,4V
- Collector Cut-Off Current (Icbo) 3mA
- Collector-Emitter Breakdown Voltage (Vceo) 250V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.5V@2.5A,20A
- Package TO-204
- Manufacturer onsemi
- Series SWITCHMODE™
- Packaging Tray
- Part Status Obsolete
- Current - Collector (Ic) (Max) 40A
- Voltage - Collector Emitter Breakdown (Max) 250V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 2.5A, 20A
- Current - Collector Cutoff (Max) 3mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10A, 4V
- Power - Max 250W
- Frequency - Transition 8MHz
- Mounting Type Through Hole
- Package / Case TO-204AE
- Supplier Device Package TO-3
- Base Part Number BUV22
- detail Bipolar (BJT) Transistor NPN 250V 40A 8MHz 250W Through Hole TO-3
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