BD809G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت BD809G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi BD809G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 10A
Power Dissipation (Pd): 90W
Transition Frequency (fT): 1.5MHz
DC Current Gain (hFE@Ic,Vce): 15@4A,2V
Collector Cut-Off Current (Icbo): 1mA
Collector-Emitter Breakdown Voltage (Vceo): 80V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.1V@3A,300mA
Package: TO-220
Manufacturer: onsemi
Series: -
Packaging: Tube
Part Status: Active
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Power - Max: 90W
Frequency - Transition: 1.5MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: BD809
detail: Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220AB