BDX53BG دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BDX53BG
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حجم فایل
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89.061
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi BDX53BG
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Transistor Type:
NPN
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DC current gain (hFE@Vce,Ic):
750@3A,3V
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Collector cut-off current (Icbo@Vcb):
500uA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
2V@12mA,3A
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
8A
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Voltage - Collector Emitter Breakdown (Max):
80V
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Vce Saturation (Max) @ Ib, Ic:
2V @ 12mA, 3A
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Current - Collector Cutoff (Max):
500µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 3A, 3V
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Power - Max:
65W
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Frequency - Transition:
-
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Operating Temperature:
-65°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220AB
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Base Part Number:
BDX53
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detail:
Bipolar (BJT) Transistor NPN - Darlington 80V 8A 65W Through Hole TO-220AB
