BDX53BG
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | BDX(53,54)B,C |
| Description | Bipolar (BJT) Transistor NPN - Darlington 80V 8A 65W Through Hole TO-220AB |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi BDX53BG
- Transistor Type NPN
- DC current gain (hFE@Vce,Ic) 750@3A,3V
- Collector cut-off current (Icbo@Vcb) 500uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 2V@12mA,3A
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
- Current - Collector Cutoff (Max) 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
- Power - Max 65W
- Frequency - Transition -
- Operating Temperature -65°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number BDX53
- detail Bipolar (BJT) Transistor NPN - Darlington 80V 8A 65W Through Hole TO-220AB
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