NJW44H11G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NJW44H11G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NJW44H11G
Transistor Type: NPN
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 10A
Power Dissipation (Pd): 120W
Transition Frequency (fT): 85MHz
DC Current Gain (hFE@Ic,Vce): 80@4A,2V
Collector Cut-Off Current (Icbo): 10uA
Collector-Emitter Breakdown Voltage (Vceo): 80V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
Package: TO-3P-3
Manufacturer: onsemi
Series: -
Packaging: Tube
Part Status: Active
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
Power - Max: 120W
Frequency - Transition: 85MHz
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P-3L
Base Part Number: NJW44
detail: Bipolar (BJT) Transistor NPN 80V 10A 85MHz 120W Through Hole TO-3P-3L