NJW44H11G

NJW44H11G

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مشخصات فنی:
Manufacturer onsemi
Package TO-3P-3, SC-65-3
Datasheet NJW44H11G
Description Bipolar (BJT) Transistor NPN 80V 10A 85MHz 120W Through Hole TO-3P-3L

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet onsemi NJW44H11G
  • Transistor Type NPN
  • Operating Temperature -65°C~+150°C@(Tj)
  • Collector Current (Ic) 10A
  • Power Dissipation (Pd) 120W
  • Transition Frequency (fT) 85MHz
  • DC Current Gain (hFE@Ic,Vce) 80@4A,2V
  • Collector Cut-Off Current (Icbo) 10uA
  • Collector-Emitter Breakdown Voltage (Vceo) 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@8A,400mA
  • Package TO-3P-3
  • Manufacturer onsemi
  • Series -
  • Packaging Tube
  • Part Status Active
  • Current - Collector (Ic) (Max) 10A
  • Voltage - Collector Emitter Breakdown (Max) 80V
  • Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max) 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 4A, 2V
  • Power - Max 120W
  • Frequency - Transition 85MHz
  • Mounting Type Through Hole
  • Package / Case TO-3P-3, SC-65-3
  • Supplier Device Package TO-3P-3L
  • Base Part Number NJW44
  • detail Bipolar (BJT) Transistor NPN 80V 10A 85MHz 120W Through Hole TO-3P-3L

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