دیتاشیت 2SB1205T-E
مشخصات دیتاشیت
| نام دیتاشیت |
2SB1205
|
| حجم فایل |
371.226
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2SB1205T-E
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
1W
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Transition Frequency (fT):
320MHz
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DC Current Gain (hFE@Ic,Vce):
200@500mA,2V
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Collector Cut-Off Current (Icbo):
500nA
-
Collector-Emitter Breakdown Voltage (Vceo):
20V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@3A,60mA
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Package:
TO-251
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Bulk
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Part Status:
Active
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Current - Collector (Ic) (Max):
5A
-
Voltage - Collector Emitter Breakdown (Max):
20V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 60mA, 3A
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Current - Collector Cutoff (Max):
500nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
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Power - Max:
1W
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Frequency - Transition:
320MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Supplier Device Package:
TP
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Base Part Number:
2SB1205
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detail:
Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Through Hole TP
