دیتاشیت MJ11012G
مشخصات دیتاشیت
| نام دیتاشیت |
MJ11012G
|
| حجم فایل |
91.218
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi MJ11012G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+200°C@(Tj)
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Collector Current (Ic):
30A
-
Power Dissipation (Pd):
200W
-
Transition frequency (fT):
4MHz
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DC current gain (hFE@Vce,Ic):
1000@5V,20A
-
Collector-emitter voltage (Vceo):
60V
-
Collector cut-off current (Icbo@Vcb):
1mA
-
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
4V@30A,300mA
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Package:
TO-204
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tray
-
Part Status:
Active
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Current - Collector (Ic) (Max):
30A
-
Voltage - Collector Emitter Breakdown (Max):
60V
-
Vce Saturation (Max) @ Ib, Ic:
4V @ 300mA, 30A
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Current - Collector Cutoff (Max):
1mA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 20A, 5V
-
Power - Max:
200W
-
Frequency - Transition:
4MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-204AA, TO-3
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Supplier Device Package:
TO-204 (TO-3)
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Base Part Number:
MJ110
-
detail:
Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
