MJ11012G
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | onsemi |
| Package | TO-204AA, TO-3 |
| Datasheet | MJ11012,15,16 |
| Description | Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3) |
فروشنده های MJ11012G
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات MJ11012G
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi MJ11012G
- Transistor Type NPN
- Operating Temperature -55°C~+200°C@(Tj)
- Collector Current (Ic) 30A
- Power Dissipation (Pd) 200W
- Transition frequency (fT) 4MHz
- DC current gain (hFE@Vce,Ic) 1000@5V,20A
- Collector-emitter voltage (Vceo) 60V
- Collector cut-off current (Icbo@Vcb) 1mA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 4V@30A,300mA
- Package TO-204
- Manufacturer onsemi
- Series -
- Packaging Tray
- Part Status Active
- Current - Collector (Ic) (Max) 30A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A
- Current - Collector Cutoff (Max) 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V
- Power - Max 200W
- Frequency - Transition 4MHz
- Mounting Type Through Hole
- Package / Case TO-204AA, TO-3
- Supplier Device Package TO-204 (TO-3)
- Base Part Number MJ110
- detail Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
فروشنده های MJ11012G
فروشگاهی یافت نشد