دیتاشیت FDS6930B
مشخصات دیتاشیت
| نام دیتاشیت |
FDS6930B
|
| حجم فایل |
319.429
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
2 N-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDS6930B
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
900mW
-
Total Gate Charge (Qg@Vgs):
3.8nC@5V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
412pF@15V
-
Continuous Drain Current (Id):
5.5A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
38mΩ@10V,5.5A
-
Package:
SOP-8
-
Manufacturer:
onsemi
-
Series:
PowerTrench®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
2 N-Channel (Dual)
-
FET Feature:
Logic Level Gate
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
5.5A
-
Rds On (Max) @ Id, Vgs:
38mOhm @ 5.5A, 10V
-
Vgs(th) (Max) @ Id:
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
3.8nC @ 5V
-
Input Capacitance (Ciss) (Max) @ Vds:
412pF @ 15V
-
Power - Max:
900mW
-
Mounting Type:
Surface Mount
-
Package / Case:
8-SOIC (0.154", 3.90mm Width)
-
Supplier Device Package:
8-SOIC
-
Base Part Number:
FDS69
-
detail:
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC
